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125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
Layout Information
The MAX15018_/MAX15019_ drivers source and sink
large currents to create very fast rise and fall edges at
the gates of the switching MOSFETs. The high di/dt can
cause unacceptable ringing if the trace lengths and
impedances are not well controlled. Use the following
PCB layout guidelines when designing with the
MAX15018_/MAX15019_:
? It is important that the V DD voltage (with respect to
ground) or BST voltage (with respect to HS) does not
exceed 15V. Voltage spikes higher than 15V from
V DD to GND or from BST to HS can damage the
device. Place one or more low-ESL 0.1μF decoupling
ceramic capacitors from V DD to GND and from BST
to HS as close as possible to the part. The ceramic
decoupling capacitors should be at least 20 times
the gate capacitance being driven.
? There are two AC current loops formed between the
IC and the gate of the MOSFET being driven. The
MOSFET looks like a large capacitance from gate to
source when the gate is being pulled low. The active
current loop is from the MOSFET driver output (DL or
DH) to the MOSFET gate, to the MOSFET source, and
to the return terminal of the MOSFET driver (either
GND or HS). When the gate of the MOSFET is being
pulled high, the active current loop is from the MOS-
FET driver output, (DL or DH), to the MOSFET gate, to
the MOSFET source, to the return terminal of the dri-
vers decoupling capacitor, to the positive terminal of
the decoupling capacitor, and to the supply connec-
tion of the MOSFET driver. The decoupling capacitor
will be either C BST for the high-side MOSFET or the
V DD decoupling capacitor for the low-side MOSFET.
Care must be taken to minimize the physical distance
and the impedance of these AC current paths.
? Solder the exposed pad of the 8-pin SO-EP package
to a large copper plane to achieve the rated power
dissipation.
Typical Application Circuits
V DD = 8V TO 12.6V
V DD
BST
V IN = 0 TO 125V
DH
N
PWM1
IN_H
MAX15018A
PWM2
HS
N
V OUT
IN_L
DL
N
N
GND
Figure 2. Half-Bridge Converter Application with Secondary-Side Synchronous Rectification
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